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| FDMC2610 N-Channel UltraFET Trench(R) MOSFET September 2006 FDMC2610 N-Channel UltraFET Trench(R) MOSFET 200V, 9.5A, 200m Features General Description This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor`s advanced Power Trench process. It has been optimized for power management applications. Max rDS(on) = 200m at VGS = 10V, ID = 2.2A Max rDS(on) = 215m at VGS = 6V, ID = 1.5A Low Profile - 1mm max in a MicroFET 3.3 x 3.3 mm RoHS Compliant tm Application DC - DC Conversion Bottom Top 5 6 7 8 D D D D 5 6 7 G S S S 4 3 2 1 4 3 2 1 8 MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage -Continuous (Silicon limited) Gate to Source Voltage Drain Current -Continuous (Silicon limited) -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC = 25C TA = 25C (Note 1a) TC = 25C TA = 25C (Note 1a) Ratings 200 20 9.5 2.2 15 42 2.1 -55 to +150 W C A Units V V Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3 60 C/W Package Marking and Ordering Information Device Marking FDMC2610 Device FDMC2610 Package MLP3.3X3.3 Reel Size 7'' Tape Width 8mm Quantity 3000 units (c)2006 Fairchild Semiconductor Corporation FDMC2610 Rev.B 1 www.fairchildsemi.com FDMC2610 N-Channel UltraFET Trench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 160V, VGS = 0V TJ = 125C VGS = 20V, VGS = 0V 200 199 1 10 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 2.2A VGS = 6V, ID = 1.5A VGS = 10V, ID = 2.2A TJ = 125C VDS = 5V, ID = 2.2A 2 3.2 -9.9 175 188 347 7 200 215 397 S m 4 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 100V, VGS = 0V, f = 1MHz f = 1MHz 720 41 12 0.7 960 55 20 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VGS = 0V to 10V VDD = 100V ID = 2.2A VDD = 100V, ID = 2.2A VGS = 10V, RGEN = 24 17 13 29 16 12.3 3 3.6 31 24 47 29 18 ns ns ns ns nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 2.2A (Note 2) 0.8 69 114 1.2 104 171 V ns nC IF = 2.2A, di/dt = 100A/s Notes: 1: RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 60C/W when mounted on a 1 in2 pad of 2 oz copper b. 150C/W when mounted on a minimum pad of 2 oz copper 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. FDMC2610 Rev.B 2 www.fairchildsemi.com FDMC2610 N-Channel UltraFET Trench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 15 1.8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 10V VGS = 7V VGS = 4.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 5V 1.6 1.4 1.2 1.0 0.8 VGS = 6V ID, DRAIN CURRENT (A) 10 VGS = 6V VGS = 7V 5 VGS = 4.5V VGS = 5V VGS = 10V 0 0 1 2 VDS, DRAIN TO SOURCE VOLTAGE (V) 3 0 3 6 9 ID, DRAIN CURRENT(A) 12 15 Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 600 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 ID =2.2A VGS = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX ID = 1.4A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 500 TA = 150oC 400 300 TA = 25oC 200 100 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On Resistance vs Junction Temperature 12 ID, DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX Figure 4. On-Resistance vs Gate to Source Voltage 20 10 IS, REVERSE DRAIN CURRENT (A) VGS = 0V 9 TJ = 150oC 1 TJ = 25oC TJ = 150oC 6 0.1 3 TJ = 25oC TJ = -55oC 0.01 TJ = -55oC 0 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 6 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMC2610 Rev.B 3 www.fairchildsemi.com FDMC2610 N-Channel UltraFET Trench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD =50V 1000 Ciss 8 VDD = 100V 6 VDD = 150V CAPACITANCE (pF) 100 Coss 4 2 0 0 3 6 9 Qg, GATE CHARGE(nC) 12 15 10 0.1 f = 1MHz VGS = 0V Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 10 ID, DRAIN CURRENT (A) 8 VGS = 10V 4 IAS, AVALANCHE CURRENT(A) 3 TJ = 25oC 6 VGS = 6V 2 TJ = 125oC 4 2 RJC = 3 C/W o 1 -3 10 10 10 tAV, TIME IN AVALANCHE(ms) -2 -1 10 0 0 25 50 75 100 125 o TC, CASE TEMPERATURE ( C) 150 Figure 9. Unclamped Inductive Switching Capability 30 ID, DRAIN CURRENT (A) Figure 10. Maximum Continuous Drain Current vs Case Temperature 200 100 VGS = 10V P(PK), PEAK TRANSIENT POWER (W) 10 TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 - T A ----------------------125 100us 1 1ms 10ms 0.1 10 100ms 1s 0.01 1E-3 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TA = 25OC 10s DC 1 SINGLE PULSE 1 10 100 700 0.5 -3 10 10 -2 VDS, DRAIN to SOURCE VOLTAGE (V) 10 10 10 t, PULSE WIDTH (s) -1 0 1 10 2 10 3 Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDMC2610 Rev.B 4 www.fairchildsemi.com FDMC2610 N-Channel UltraFET Trench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA -2 0.01 SINGLE PULSE 0.003 -3 10 10 10 10 10 t, RECTANGULAR PULSE DURATION(s) -1 0 1 10 2 10 3 Figure 13. Transient Thermal Response Curve FDMC2610 Rev.B 5 www.fairchildsemi.com FDMC2610 N-Channel UltraFET Trench(R) MOSFET FDMC2610 Rev.B 6 www.fairchildsemi.com FDMC2610 N-Channel UItraFET Trench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 Preliminary No Identification Needed Full Production Obsolete Not In Production FDMC2610 Rev. B 7 www.fairchildsemi.com |
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